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Samsung Electronics Targets 3.25TB/s for HBM4E by 2027  25/10/15
Samsung Electronics presented a target pin speed of over 13Gbps for HBM4E, which is under development for 2027. HBM4E has 2,048 pins for data transfer, which translates to 3.25TB/s when converted to bytes (1 byte equals 8 bits). Simultaneously, Samsung Electronics stated that the power efficiency of HBM4E would be more than twice that of the current HBM3E, which is 3.9 picojoules (pJ) per bit.
Notice of National Day Holiday  25/09/30
Due to the National Day holiday, Chinaflashmarket will postpone market quotation from Oct. 1st to Oct. 8th , and all product quotations will resume on Oct. 9th.
Kioxia developing 100 million IOPS SSD for Nvidia  25/09/16
Kioxia is working with Nvidia to build extremely fast AI SSDs to augment high-bandwidth memory (HBM) by being directly connected to GPUs, with 2027 availability.
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Stock Information
Update: 10-16 08:55,Data has delay
Samsung KRW 96350 +1.42%
SK Hynix KRW 430500 +1.89%
KIOXIA JPY 6780 +7.28%
Micron USD 191.940 +2.61%
WDC USD 120.440 +6.46%
SanDisk USD 144.300 +13.36%
Nanya TWD 86.3 -3.14%
Winbond TWD 40.00 -1.72%
Phison TWD 782 +0.13%
SMI USD 92.645 +4.40%
Maxio CNY 57.75 +0.72%
ASolid TWD 84.7 +8.04%
Longsys CNY 169.50 +0.89%
Seagate USD 219.380 +3.66%
Innodisk TWD 401.0 +5.11%
Transcend TWD 127.0 +2.83%
A-DATA TWD 182.5 +1.96%
PENG USD 22.650 +0.40%
Netac CNY 28.93 +5.97%
BWCC CNY 104.40 -0.06%
Techwinsemi CNY 178.60 +2.07%
DAWEI CNY 20.45 +0.84%
OSE TWD 46.10 +1.65%
PTI TWD 150.0 +1.69%
JCET CNY 41.92 +2.77%
ASE TWD 178.0 +5.01%
TFME CNY 42.48 +0.47%
HT-tech CNY 11.78 +4.16%