Samsung Electronics presented a target pin speed of over 13Gbps for HBM4E, which is under development for 2027. HBM4E has 2,048 pins for data transfer, which translates to 3.25TB/s when converted to bytes (1 byte equals 8 bits). Simultaneously, Samsung Electronics stated that the power efficiency of HBM4E would be more than twice that of the current HBM3E, which is 3.9 picojoules (pJ) per bit.
Due to the National Day holiday, Chinaflashmarket will postpone market quotation from Oct. 1st to Oct. 8th , and all product quotations will resume on Oct. 9th.
Kioxia is working with Nvidia to build extremely fast AI SSDs to augment high-bandwidth memory (HBM) by being directly connected to GPUs, with 2027 availability.
