Samsung Electronics has begun mass producing 4Gb, low-power DDR2 (LPDDR2) DRAM using 30nm-class technology, according to the company. The mobile DRAM chip will help the market to deliver thinner and lighter smartphones, tablets and other mobile devices, with longer battery life.
Samsung's 4Gb LPDDR2 DRAM delivers a data transmission speed of 1,066Mbps, which is more than double that of today's mobile DRAM operating between 333 to 400Mbps. The chip also enables a thinner, memory solution. When creating a 1GB (8Gb) LPDDR2 package with the previously highest density chips of 2Gb, four chips had to be stacked together. With the new 4Gb LPDDR2, stacking only two chips will achieve the same density, while providing a 20% package height reduction from 1.0mm to 0.8mm. In addition, It consumes 25% less power.
Samsung plans to produce the 4Gb LPDDR2 chip-based 1GB (8Gb) packages beginning in March, and plans to produce 2GB (16Gb) packages consisting of four 4Gb devices in April to accommodate a growing need for high-density mobile DRAM solutions.
Samsung expects that the new 4Gb LPDDR2 based solutions will benefit mobile device makers greatly as they launch competitive products using dual-core processors, which require mobile memory with higher performance and density.
"Mass production of 4Gb LPDDR2 is a tremendous advancement for the mobile industry, one that will enable our OEM customers to move quickly in launching better differentiated high-performance mobile devices into the market," said Wanhoon Hong, executive VP, memory sales & marketing, Samsung Electronics.