Intel and Micron Technology have jointly introduced a 20nm process technology for manufacturing NAND flash memory, about one year after the pair announced 25nm NAND technology.
Manufactured by their joint venture IM Flash Technologies, the new 20nm process produces an 8-gigabyte (8GB) multi-level cell (MLC) NAND flash device providing a high-capacity, small form factor storage option for saving music, video, books and other data on smartphones, tablets and computing solutions such as solid-state drives (SSDs).
The new 20nm 8GB device measures just 118 square millimeters, and enables a 30-40% reduction in board space (depending on package type) compared to the companies' existing 25nm 8GB NAND device. A reduction in the flash storage layout provides greater system level efficiency as it enables tablet and smartphone manufacturers to use the extra space for end-product improvements such as a bigger battery, larger screen or adding another chip to handle new features.
The 20nm, 8GB device is sampling now with mass production slated for the second half of 2011. Intel and Micron also expect to unveil samples of a 16GB device, creating up to 128GBs of capacity in a single solid-state storage solution that is smaller than a US postage stamp, the companies said.
"The Intel-Micron joint venture is a model for the manufacturing industry as we continue to lead the industry in process technology and make quick transitions of our entire fab network to smaller and smaller lithographies," said Tom Rampone, vice president and general manager, Intel Non-Volatile Memory Solutions Group, in a statement.