Samsung Electronics has announced what it claims is the industry's first production of a high-performance Toggle DDR 2.0 multi-level-cell (MLC) memory chip, designed to support the high-performance requirements of mobile devices such as smartphones, tablets and solid state drives (SSDs). The new chip features a 64Gb density, made possible by using an advanced 20nm-class process technology.
Equipped with a toggle DDR (Double Data Rate) 2.0 interface, the new 64Gb MLC chip can transmit data at a bandwidth of up to 400Mbps, Samsung said. This provides a 10-fold increase over the 40Mbps SDR NAND flash memory in widespread use today, and a three-fold boost over 133Mbps toggle DDR 1.0, 32Gb NAND flash memory, which Samsung was first to produce in 2009.
"With this 20nm-class, 64Gb, Toggle DDR 2.0 NAND, Samsung is leading the market, which is evolving to fourth-generation smartphones and SATA 6Gbps SSDs," said Wanhoon Hong, executive VP, memory sales & marketing, Samsung Electronics.
The high-speed 400Mbps bandwidth of toggle DDR 2.0 is expected to better support the ongoing shift toward advanced interfaces, as more mobile and consumer electronics devices requiring added performance and higher densities adopt new interfaces such as USB 3.0 and SATA 6.0Gbps, according to Samsung.
The new 64Gb MLC NAND chip also offers an approximate 50% increase in productivity over 20nm-class 32Gb MLC NAND chips with a Toggle DDR 1.0 interface, which Samsung started producing in April 2010, and more than doubles the productivity of 30nm-class 32Gb MLC NAND, the company said.