Samsung Electronics Co. Ltd buys spin-transfer torque random access memory (STT-RAM) vendor, Grandis Inc., which will be integrated into Samsung's R&D operations focused on developing next-generation memory where new semiconductor materials and structures are reviewed for their long-term commercial value.
According to Samsung, Grandis will contribute to its development of memory technology and become a key part of the company's global R&D network.
Grandis was established in 2002 to develop SST-RAM, which is said to combine the cost benefits of DRAM, the fast read and write performance of SRAM, and the non-volatility of flash. STT-RAM is also said to solve the key drawbacks of first-generation, field-switched magnetic-RAM (MRAM). The company received total funding of Rs.66.96 crore ($15 million) from several investors, including Applied Ventures, Sevin Rosen Funds, Matrix Partners, Incubic and Concept Ventures.
The terms of the acquisition were not disclosed.
In June 2010, Grandis updated its product roadmap with the ambitious goals of replacing DRAM, and eventually, NAND, with its next-generation MRAM.
STT-RAM is a second-generation MRAM technology that is said to solve some of the problems posed by conventional MRAM structures. Most MRAMs that are now being developed write data by applying the magnetic field generated by a current running through a wire near a tunnelling magnetoresistive element to change the magnetisation. That enables fast operation, but, according to Grandis, it also gobbles power.
For years, developers of MRAM and other next-generation memory technologies have claimed that they would become the ultimate universal memory and replace today's memories. But, to date, none of the technologies have lived up to the hype, while current memory technologies such as DRAM and NAND have continued to scale.