Lam Research, a leading provider of semiconductor manufacturing equipment, has launched its latest innovation in the field of 3D NAND production with the introduction of Lam Cryo™ 3.0. This groundbreaking technology is designed to meet the escalating storage demands spurred by the widespread adoption of generative AI, which requires memory solutions with enhanced capacity and performance.

The Lam Cryo 3.0 technology has been engineered to create high-aspect-ratio (HAR) features with angstrom-level precision, a significant advancement over traditional dielectric processes. This new etching capability not only ensures superior electrical performance of the chips but also promises a substantial reduction in environmental impact. The etch rate of Lam Cryo 3.0 is more than double that of conventional methods, marking a leap forward in 3D NAND production.

With over 5 million wafers already manufactured using Lam's cryogenic etching technology, the industry has witnessed a significant breakthrough. The new technology is capable of etching storage channels with depths up to 10 micrometers, with a critical dimension variation from top to bottom of less than 0.1%, addressing the challenges of etching HAR features that could previously affect yield and electrical performance.

Lam Cryo 3.0 is equipped with the company's unique high-power confined plasma reactor, process improvements, and temperatures significantly below zero degrees Celsius, which, when combined with Lam's latest Vantex® dielectric system and scalable pulse plasma technology, significantly enhances etch depth and profile control.

The technology also boasts superior production efficiency, with an etch speed 2.5 times faster than traditional dielectric processes, and better wafer-to-wafer repeatability, aiding 3D NAND manufacturers in achieving high yields at a lower cost. Moreover, Lam Cryo 3.0 demonstrates a higher level of sustainability, reducing energy consumption per wafer by 40% and emissions by up to 90% compared to traditional etching processes.

Maximizing equipment investment, Lam Cryo 3.0 is integrable with Lam's latest Vantex system for optimal profile control and the fastest, deepest dielectric etching. It is also compatible with the company's Flex® HAR dielectric etch product line, which is widely used by all major storage manufacturers for 3D NAND mass production.