At its Samsung Mobile Solutions Forum 2012, Samsung Electronics has announced two memory chips designed specifically for next-generation smartphones, tablets and other mobile devices.

Samsung disclosed that the company has begun volume production of 128GB embedded memory. With 128GB of the new embedded memory storage, mobile handsets and tablets can store up to 15 full HD, 8GB-equivalent video files, according to Samsung.

The new Samsung eMMC fits into an slim 12mm by 16mm FBGA package that accommodates sleeker mobile designs. Samsung indicated that its eMMC Pro cards read data sequentially at up to 140MB/s and write it at up to 50MB/s. The ultra high-speed storage device uses the company's 64Gb NAND memory with a toggle DDR 2.0 interface based on 20nm-class process technology. The Samsung eMMC Pro Class 1500 supports the JEDEC eMMC v4.5 specification, the company added.

Samsung also revealed that the company has begun mass producing the industry's first 2GB, low power DDR3 (LPDDR3) memory using 30nm-class technology. Designed specifically for next-generation mobile devices, the new LPDDR3 utilizes four LPDDR3 chips stacked together.

The new 2GB LPDDR3 DRAM can transfer data at up to 1600Mbps per pin, which is approximately 50% faster than a LPDDR2 DRAM, Samsung said. And on the package level, it provides a data transmission rate up to 12.8GB/s, which will enable playing of full HD video content in real-time on smartphones and tablets.

By providing an early extensive global supply of LPDDR3 DRAM to smartphone and tablet manufacturers, Samsung expects to see a significant increase in the adoption of 2GB mobile DRAM.

In other news, Samsung recently held a groundbreaking ceremony for a new flash memory plant in Xian, China. With the groundbreaking, the Samsung China Semiconductor complex has a target time-line for achieving full-fledged operation in 2014, Samsung said.

Samsung revealed that initially, the company will invest US$2.3 billion in the Xian fab. Total investment is estimated at US$7 billion.