Samsung Electronics and SK Hynix have both stepped up efforts to migrate to 20nm process technology, which is expected to become their mainstream production node for DRAM memory in 2013, according to industry sources.

The pair already started to volume produce DRAM chips using their 20nm process nodes in 2012, the sources observed. Having the newer technology replace 30nm as the mainstream process node will likely take place in the second half of 2013, the sources believe.

Meanwhile, Samsung and Hynix will gradually turn their focus away from the market for PC DRAM, which continues to suffer from an oversupply of chips, the sources indicated. Their 20nm processes will initially target the manufacture of 4Gb chips used for mobile device and server applications, the sources said.

In addition, fellow DRAM firms Micron Technology, Nanya Technology and Inotera Memories are all gearing up for transition to 30nm process technology, the sources noted. The players have also accelerated their deployments in the markets for mobile DRAM and server memory chips, the sources said.

Taiwan-based Inotera, for instance, is scheduled to complete its technology transition to 30nm by the middle of 2013. Monthly capacity at Inotera is estimated at 40,000 12-inch wafers.

Inotera is the production subsidiary of Micron, which is in the process of acquiring bankrupt Elpida.