Toshiba has announced that it will construct a fab for producing NAND flash memory next to its Yokkaichi Operations in Mie Prefecture, Japan. Construction of the new fab (Fab 5) will start in July this year.
Toshiba currently has four NAND flash memory fabs at its Yokkaichi Operations. As demand is recovering with the market penetration of smartphones and other new applications, Toshiba said it has foreseen further market expansion in the medium- and long-term.
Toshiba said the scale of Fab 5 will be comparable with that of Fab 4, which is now in operation. The new fab will have a quake-absorbing structure, and be designed for minimal environmental impact. Energy-saving clean rooms and effective use of waste heat are expected to cut CO2 emissions to a level 12% lower than from Fab 4.
Toshiba expects to complete the construction of Fab 5 in spring 2011, according to the company. Details of the investment plan and the fab's capacity will be decided by reviewing market trends.