Samsung announced recently that it started production of advanced NAND flash devices with 128Gbit, triple-level cell (TLC) NAND memory using 10-nm class process technology.

　　Similarly, Micron also announced in February that it would come to market with NAND flash devices with a memory capacity of 128 Gbit that also use TLC design. It was only last fall that Samsung introduced a 64 Gbit NAND flash using TLC and 21-nm process technology. 

　　Clearly, the industry is moving toward TLC cell design even for demanding SSD applications. The concept of a multi-bit per cell technology was first introduced by Toshiba and for the last five years, all flash device makers have products using the 2-bit per cell design.