DRAM maker Inotera Memories plans to migrate to a 42nm process in September 2010, two months ahead of its original schedule, according to company chairman Jih Lien. Lien also confirmed previous reports that it would again raise its capex budget for 2010, without disclosing more details.
Market watchers speculate Inotera is likely to revise its 2010 capex to NT$57 billion (US$1.763 billion). The DRAM maker in January upwardly adjusted its capex for the year to NT$52 billion, from an initial goal of NT$45 billion.
Inotera expects to see its 50nm production ramp reflect in its financial figures starting from the third quarter, Lien indicated. Half of its output will be 50nm-made products in the third quarter, which helps lower production costs significantly, Lien added.
Inotera slipped back into the red in the first quarter due to production losses incurred from its process transition from trench to stack technology. The company was quoted in previous reports saying it began ramping production using 50nm stack process in April.
Inotera president Charles Kao noted that the company intends to move up its schedule to deploy 42nm technology, in order to bring itself closer to Samsung Electronics. Production is expected to kick off in small volume at the end of 2010.
Inotera will have around 10 sets of immersion scanner equipment settled at its fabs by the end of the year, according to Kao.
Inotera is a DRAM-manufacturing joint venture between Micron Technology and Nanya Technology, and now runs two 12-inch fabs with a combined capacity of 130,000 wafers per month.
In addition, Kao commented that Samsung's chip capex for 2010 is targeted at taking on Toshiba in the NAND flash segment instead of ramping up substantially of its DRAM chips, and the Korea-based vendor is also seeking to boost its foundry operations. The impact of Samsung's capacity ramp on the global DRAM market should be lower than expected, Kao believes.