ProMOS Technologies has announced the successful trial manufacturing of 1Gb DDR3 DRAM products, employing Elpida Memory's 63nm (65nm-XS, Super-shrink) technology, at its 12-inch wafer fab located at the Central Taiwan Science Park (CTSP). Test results from the very first lot of trial production have shown that device parameters are within product specifications and the product is fully compatible for applications in PC, digital consumer and mobile markets.
ProMOS began deploying 63nm stack technology at the CTSP facility in March, with mass production scheduled to commence five months later, the company was quoted in previous reports. Its monthly output for Elpida's 1Gb DDR3 is expected to reach 35,000 wafer starts by the end of 2010.
ProMOS said it expects to deploy Elpida's 45nm technology in the second half of 2011, and is also mulling plans to expand production capacity at its 12-inch fab to 80,000 wafers a month at the end of the year.
ProMOS originally owned two 12-inch DRAM fabs. Earlier this year, it sold the one located at the Hsinchu Science Park (HSP) to Macronix International, a maker of ROM and NOR flash chips.
In addition, ProMOS's capital reduction was approved during the company's 2010 shareholders meeting on June 18. Meanwhile, the company's plans to bring in new capital through issuing up to one billion common shares, a private placement, and the sale of securities were also approved by its shareholders.
ProMOS's fundraiser is aimed at bringing in three to five strategic partners, according to company chairman ML Chen.