Samsung Electronics and Toshiba have announced their commitment to develop a DDR NAND flash memory with a 400Mb/s interface, toggle DDR 2.0 specification. Both companies said they will support a standard industry specification to enable broad-scale acceptance of this new high-speed technology.
The DDR 2.0 NAND memory will target NAND-based mobile and consumer electronics applications, especially where there is consumer demand for an extra stretch in performance, according to industry sources.
The current toggle DDR 1.0 specification applies a DDR interface to conventional single data rate (SDR) NAND architecture. The resulting NAND chip has a 133Mb/s interface. Samsung and Toshiba said they will focus on assuring a 400Mb/s interface for the toggle DDR 2.0 specification, which provides a three-fold increase over toggle DDR 1.0, and a ten-fold increase over 40Mb/s SDR NAND in widespread use today.
In June 2010, Samsung and Toshiba both began participating in standardization efforts for DDR 2.0 through the JEDEC Solid State Technology Association.
"Toggle DDR provides a faster interface than conventional NAND using an asynchronous design, delivering the benefits of high-speed data transfer to a wider market, such as for SSD applications including enterprise storage, mobile phones, multimedia terminals and consumer products," said Masaki Momodomi, Technical Executive, Memory product, Toshiba.
"Continual upgrades in high-speed performance will create new applications and broader market opportunities for NAND flash memory," said Dong-Soo Jun, executive vice president, memory marketing, Samsung. "The rapid adoption of 4G smartphones, tablet PCs and SSDs is expected to drive demand for a broader range of high-performance NAND solutions."