The debut of Samsung Electronics's new flagship smartphone the Galaxy S6 at the upcoming MWC 2015 will mark the world's first smartphone powered by a 14nm 3D FinFET processor and could also serve as a turning point for the vendor's semiconductor business.

Success in sales of the Galaxy S6 will not only help rekindle Samsung's handset business, but also its semiconductor product lines, including DRAM and NAND flash chips.

The original roadmap for the Galaxy S6 called for the production in two versions, one powered by Qualcomm's 20nm Snapdragon 810 CPU manufactured by Taiwan Semiconductor Manufacturing Company (TSMC) and the other by its in-house developed Exynos CPU made on its own 14nm FinFET process.

Samsung implemented the dual-CPU strategy at the previous Galaxy S4, with the smartphones sold in Asia and Africa using its Exynos 5 CPUs and those for the US and Europe markets equipped with Qualcomm's Snapdragon 600 processors, although both Exynos 5 and Snapdragon 600 chips are available on a 28nm process.

However, Samsung decided to dump the Snapdragon 810 for use in the Galaxy S6 in late 2014 in favor of its own Exynos-series chip due to concerns related to the design and overheating issues.

While Samsung may continue to stick to its dual-CPU policy for the Galaxy S6 later, the Snapdragon 810's misstep turned out to a blessing in disguise for Samsung in the development of its 14nm FinFET process.

For Samsung, the 14nm FinFET process is a key to bringing a turnaround of its foundry business. To reach its goal it has poured much of its resources into the development of the 14nm node, while bypassing the 20nm process.

Additionally, the Galaxy S6 reportedly will be available in three memory capacities: 32GB, 64GB and 128GB, which will consume a lot of NAND flash chips.

As a result, a successful debut of the Galaxy S6 will mean a rebound for Samsung's semiconductor business, including its foundry and NAND flash product lines.