A mild price rebound may occur in the memory spot market after the week-long holidays in China, although pressure for downward adjustments will linger, according to inSpectrum.According to local traders/brokers, most of them saw demand for both DRAM and NAND flash start to emerge before the holidays ended in China. As most believe that China-based buyers have consumed most of their inventories during the holidays, replenishments should continue next week, inSpectrum said.But inSpectrum believes that any price rebound will be short lived as fundamental demand at channels is still very slow. Although a mild price rise was seen in some segments this week (October 4-8), the growth momentum did not last long.The DRAM segment saw some vendors continue offering competitive quotes for their effectively tested (eTT) chips at channels, further undermining the overall price trend, inSpectrum said.As of the noon session of October 8, spot prices of 1Gb DDR3 and DDR2 dropped by 2% to US$1.78 and US$1.79, respectively. Spot price of 16Gb multi-level cell (MLC) NAND flash dropped by 1% to US$4.26 and 32Gb MLC went up 2% to US$5.24.