According to industry sources on July 19, Samsung Electronics achieved a 50-70% yield rate in performance tests of 10nm (nanometer) class 6th-generation DRAM wafers last month. This marks substantial progress compared to the less than 30% yield rate recorded for the same product last year.
In a recent interview, Micron's Executive Vice President and Chief Business Officer, Sumit Sadana, acknowledged that the phase?out comes at a time when demand for DDR4 remains unexpectedly strong. He noted that shortages of both DDR4 and LPDDR4 modules have driven spot-market prices to levels that, in some cases, exceed those of newer DDR5 products.
The HBM3E used in the MI350 series is believed to be Samsung’s 36GB 12-layer DRAM, completed last year. The chip vertically stacks 24Gb DRAM dies using through-silicon sia (TSV) technology, offering 36GB per package.
