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Samsung Electronics Targets 3.25TB/s for HBM4E by 2027  25/10/15
Samsung Electronics presented a target pin speed of over 13Gbps for HBM4E, which is under development for 2027. HBM4E has 2,048 pins for data transfer, which translates to 3.25TB/s when converted to bytes (1 byte equals 8 bits). Simultaneously, Samsung Electronics stated that the power efficiency of HBM4E would be more than twice that of the current HBM3E, which is 3.9 picojoules (pJ) per bit.
Notice of National Day Holiday  25/09/30
Due to the National Day holiday, Chinaflashmarket will postpone market quotation from Oct. 1st to Oct. 8th , and all product quotations will resume on Oct. 9th.
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Kioxia is working with Nvidia to build extremely fast AI SSDs to augment high-bandwidth memory (HBM) by being directly connected to GPUs, with 2027 availability.
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Price Trend
Stock Information
Update: 10-18 14:56,Data has delay
Samsung KRW 97900 +0.20%
SK Hynix KRW 465500 +2.87%
KIOXIA JPY 6560 -4.65%
Micron USD 202.380 -0.07%
WDC USD 126.200 +0.22%
SanDisk USD 140.160 -2.85%
Nanya TWD 104.0 +9.59%
Winbond TWD 43.95 -0.11%
Phison TWD 850 -1.16%
SMI USD 94.140 +1.93%
Maxio CNY 57.10 -3.35%
ASolid TWD 83.7 -2.67%
Longsys CNY 177.90 -2.05%
Seagate USD 225.400 -0.28%
Innodisk TWD 413.0 -3.50%
Transcend TWD 133.0 -4.66%
A-DATA TWD 188.0 -0.27%
PENG USD 21.740 -3.33%
Netac CNY 28.73 -2.68%
BWCC CNY 104.40 -8.06%
Techwinsemi CNY 183.03 -6.84%
DAWEI CNY 20.28 -2.87%
OSE TWD 46.80 -1.78%
PTI TWD 153.5 -1.60%
JCET CNY 39.50 -5.32%
ASE TWD 196.0 +2.35%
TFME CNY 38.77 -9.46%
HT-tech CNY 12.96 +10.02%