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Samsung in Talks with Broadcom to Supply 12-layer HBM3E, Estimated Volume Reaches 1 Billion Gb  25/07/04
According to Korean media reports, Samsung Electronics has recently completed quality testing of its 12-layer HBM3E products with Broadcom and is now negotiating mass production supply. The current discussions involve an estimated supply volume of approximately 1 billion gigabits (Gb), with mass production expected to begin as early as the second half of this year and extend into next year.
Samsung 6th-Gen DRAM Receives Production Readiness Approval  25/07/02
Samsung Electronics achieved a significant technological milestone by securing production readiness approval for its sixth-generation DRAM technology.
SK hynix considering building new back-end process plant in S. Korea  25/06/24
SK hynix Inc. plans to build a new semiconductor back-end process facility in central South Korea to enhance its chip-packaging capabilities, industry sources said Tuesday.
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2010-03-17
Samsung and PSC both urge on DRAM capacity control
2010-03-17
Taiwan-based industrial PC makers suffer short supply of components
2010-03-16
Intel Brings Affordable Solid-State Computing to Netbooks and Desktop PCs
2010-03-16
NAND flash controller designers concerned about tight foundry capacity
2010-03-16
PC vendors seeking to secure DRAM supply from Taiwan
2010-03-15
Inotera to recruit over 300 employees, says paper
2010-03-15
Memory module house Transcend to hire 1,000 staff for new plant
2010-03-15
SPI flash memory in tight supply, say NOR flash makers
2010-03-12
NAND flash contract quotes for early March mostly stable
2010-03-11
Contract quotes for DDR3 and DDR2 chips remain high in early March
2010-03-10
Winbond to raise NOR flash prices
2010-03-10
DRAM maker PSC says 2010 capex to top NT$10 billion
2010-03-09
Smartphones spur DRAM demand
2010-03-09
Macronix, Winbond February 2010 sales down slightly
2010-03-09
PTI seeking clarity on ITC ruling in Tessera DRAM case

 

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Update: 07-09 15:52,Data has delay
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