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Samsung in Talks with Broadcom to Supply 12-layer HBM3E, Estimated Volume Reaches 1 Billion Gb  25/07/04
According to Korean media reports, Samsung Electronics has recently completed quality testing of its 12-layer HBM3E products with Broadcom and is now negotiating mass production supply. The current discussions involve an estimated supply volume of approximately 1 billion gigabits (Gb), with mass production expected to begin as early as the second half of this year and extend into next year.
Samsung 6th-Gen DRAM Receives Production Readiness Approval  25/07/02
Samsung Electronics achieved a significant technological milestone by securing production readiness approval for its sixth-generation DRAM technology.
SK hynix considering building new back-end process plant in S. Korea  25/06/24
SK hynix Inc. plans to build a new semiconductor back-end process facility in central South Korea to enhance its chip-packaging capabilities, industry sources said Tuesday.
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2010-07-01
DRAM contract quotes likely to decline in July and August
2010-06-30
Samsung Elpida Bet on Rising DRAM Demand From Smartphone Market
2010-06-30
Taiwan Memory Resurrected for NAND Flash Memory Pact
2010-06-30
TIMC to gain government subsidies for NAND flash development
2010-06-29
NAND flash contract prices to rebound in late July
2010-06-29
Samsung develops 32GB load-reduced DIMM for servers
2010-06-29
Micron posts higher profits in fiscal 3Q10
2010-06-29
TSMC receives Taiwan government approval to take SMIC stake
2010-06-28
Etron reportedly strikes deal with ProMOS for high-density SDRAM
2010-06-28
Powerchip shifting product mix approves NT$12.6 billion for 2010 capex
2010-06-25
Macronix develops 3D NAND flash
2010-06-25
Weakening US dollar spurs speculative trading in DRAM spot market
2010-06-25
Nanya 8-inch fab running at full capacity
2010-06-25
TSMC 2010 capex may exceed planned US$4.8 billion
2010-06-24
Skymedi to sell new shares via private placement

 

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Update: 07-09 01:07,Data has delay
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