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Samsung in Talks with Broadcom to Supply 12-layer HBM3E, Estimated Volume Reaches 1 Billion Gb  25/07/04
According to Korean media reports, Samsung Electronics has recently completed quality testing of its 12-layer HBM3E products with Broadcom and is now negotiating mass production supply. The current discussions involve an estimated supply volume of approximately 1 billion gigabits (Gb), with mass production expected to begin as early as the second half of this year and extend into next year.
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2010-03-24
PSC sells Zentel shares
2010-03-24
DDR3 spot prices reach US$3
2010-03-24
Toshiba to build new NAND fab in Japan
2010-03-24
Nanya and others win patent suit brought by LSI
2010-03-24
Toshiba steps up NAND competition against Samsung
2010-03-23
SanDisk ships 32GB mobile memory card
2010-03-23
Micron says no plans to expand DRAM capacity for 2010
2010-03-19
DDR2 gains stronger momentum, says inSpectrum
2010-03-19
DRAM spot prices keep rising
2010-03-18
Memory backend firms likely to see sequential revenue growth in 2Q10
2010-03-18
Tablet, low-capacity SSD seen as boost to NAND flash market
2010-03-17
SDRAM prices rise on strong demand, says Etron chairman
2010-03-17
NOR flash prices set to rise, says Macronix president
2010-03-17
PC makers scared of DRAM shortage
2010-03-17
Walton to add capacity, employees in 2010 to satisfy DDR3 testing demand

 

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Update: 07-09 12:07,Data has delay
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