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SK Hynix is reportedly planning to enhance the competitiveness of its 1C DRAM  25/11/06
According to a source in the semiconductor industry cited by South Korean media DDaily, SK Hynix will develop a specific plan for facility adjustments and equipment deployment to introduce the 1c DRAM process after optimizing the production line centered on HBM3E.
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Samsung also said on Thursday that its HBM capacity for next year has already been sold out and it was receiving additional order requests.
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2010-12-17
Intel, Micron to ramp delayed fab in 2Q11
2010-12-16
NAND flash contract prices to rise through 1Q11
2010-12-16
Chip equipment spending to slip 1% in 2011, says Gartner
2010-12-15
Zenitron points to touch panel IC and USB 3.0 as main growth drivers in 2011
2010-12-15
DRAM module makers 4Q10 profits likely hurt by rising NT dollar
2010-12-15
Memory packaging house reports November results
2010-12-14
Rexchip lowers capex for 2011
2010-12-13
DDR3 contract prices continue slide in 1H December
2010-12-13
MicroSD card controller orders buoy Skymedi sales in November
2010-12-13
NAND flash spot prices up after Toshiba power outage
2010-12-10
Phison, 3S November revenues down slightly on-month
2010-12-09
Winbond November sales up slightly on-month
2010-12-09
Intel loses 2010 chip market share while Samsung gains, says Gartner
2010-12-09
ProMOS, Rexchip November revenues slide
2010-12-09
Toshiba Says NAND Shipments May Fall on Power Outage

 

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Update: 11-18 11:26,Data has delay
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SK Hynix KRW 579000 -4.46%
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Micron USD 241.950 -1.98%
WDC USD 162.450 +2.93%
SanDisk USD 265.880 +4.61%
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